| 1. | Semiconductor superlattice distributed bragg reflector grown by molecular beam epitaxy
的分子束外延生长 |
| 2. | Algan gan heterostructure field effect transistor materials grown by molecular beam epitaxy
生长的跨导为186 |
| 3. | Molecular beam epitaxy , mbe
分子束磊晶 |
| 4. | A planar sige heterojunction bipolar transistor was fabricated using polysilicon emitter technology and sige base grown by molecular beam epitaxy . the sige hbt
室温下该晶体管的直流电流增益为30到50 ，基极开路下，收集极-发射极反向击穿电压 |
| 5. | Main works and results include : ( 1 ) . growth method of self - organized quantum dots was studied . high quality inas self - organized quantum dots were grown by mbe ( molecular beam epitaxy ) technique
本文开展的主要工作和结果有： ( 1 )研究了自组织量子点的生长方法，利用分子束外延技术( mbe )生长出高质量的inas自组织量子点。 |
| 6. | High quality single - crystal zns - based ii - vi thin films have been prepared on gaas and gap substrate using molecular beam epitaxy ( mbe ) technique . successful n - type doping of znsxse1 - x alloy using aluminum source has been carried out
本文研究了在gaas和gap衬底上，本征型和n型al掺杂zns基单晶薄膜的分子束外延生长，获得了高质量的单晶外延薄膜。 |
| 7. | To study its properties and obtain high quality thin films , a variety of techniques have been used such as molecular beam epitaxy ( mbe ) , metal organic chemical vapor deposition ( mocvd ) , magnetron sputtering , pulsed laser deposition , to prepare zno thin films
为了获得高质量的氧化锌薄膜材料，人们已采用分子束外延，有机化学汽相沉积，脉冲激光沉积，磁控溅射等各种技术来制备氧化锌薄膜材料。 |
| 8. | Fortunately , with the improvement in the material growth , gap1 - xnx alloys with nitrogen concentration as high as several percentage have been successfully grown by molecular beam epitaxy ( mbe ) or metalorganic vapor - phase epitaxy ( movpe ) . more and more attentions have been paid to this alloy for its distinct property such as the giant band gap and effect , for this reason , gap1 - xnx alloys are usually called abnormal alloys
人们研究发现， gapn混晶具有一些独特的光电性质，例如其带隙不是gap和gan的线性内插值，而是存在着较大的带隙降低和巨大的带隙弯曲系数，因此gapn混晶又被称为“反常”混晶，从而引起了人们越来越多的关注，并成为当前的一个研究热点。 |
| 9. | Molecular beam epitaxy ( mbe ) has been used to grow insb heteroepilayer on gaas ( 001 ) substrate with optimized low temperature buffer layer . the surface morphology and crystal quality of insb epilayers have been investigated by means of atomic force microscope ( afm ) , scanning electron microscopy ( sem ) and double crystals x - ray diffraction ( dcxrd )
本文采用分子束外延( mbe )方法在gaas ( 001 )衬底上优化低温缓冲层生长条件制备了异质外延insb薄膜,采用原子力显微镜( afm ) 、扫描电镜( sem )与x射线双晶衍射( dcxrd )等方法研究了insb / gaas薄膜的表面形貌与结晶质量。 |
| 10. | Based on laser molecular beam epitaxy , the strain behavior and the corresponding control technology in oxides heteroepitaxial system , especially in ferroelectric thin films with perovskite structure , was systematically studied by using in situ reflected - high - energy - electron - diffraction ( rheed ) . some original and meaningful results were obtained . following aspects were included in this dissertation : the structure of thin films is analyzed by rheed
本论文基于激光分子束外延的基本原理,以高能电子反射为主要监测工具,对氧化物薄膜特别是铁电氧化物薄膜异质外延过程中应变行为及其控制方法进行了系统的研究,并取得了一系列有意义的结果,主要包括以下内容:利用反射高能电子衍射( rheed )的信息对薄膜结构进行分析。 |
